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M&NS
> Research Lines
> Nonlinear phenomena in
microelectronic semiconductor devices
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Nonlinear phenomena in microelectronic semiconductor
devices
Topics:
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Self-sustained oscillations of
the electric current and recycling and motion of
charge domains in bulk semiconductors. In
two-dimensional samples of bulk n-GaAs with two or
more attached circular (point) contacts at different
constant voltages, a variety of spatio-temporal
structures is observed in numerical simulations of
the well-known Kroemer model. Currently, an
asymptotic reduction of the equations to the motion
of free boundaries has been completed. Theoretical
and numerical analyses of the resulting problems
constitutes an ongoing project.
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Asymptotic analysis of the
one-dimensional recycling and motion of pulses in
parabolic PDEs with integral constraints.
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